elektronische bauelemente SSI3439J -ch: 0.75a, 20v, r ds(o) 380 m* p-ch: -0.66a, -20v, r ds(o) 520 m* & p-ch enhancement mode power mosfet 06-apr-2017 rev. a page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. rohs compliant product a suffix of -c specifies halogen & lead-free description SSI3439J is n and p channel enhancement mos field effect transistor. it uses advanced trench technolo gy and design to provide excellent r ds(on) with low gate charge. this device is suitable for the use in dc-dc conver sion, load switch and level shift. features surface mount package low r ds(on) esd-protecting gate applications load/power switching interfacing switching battery management for ultra small portable electro nics marking package information package mpq leader size sot-563 3k 7 inch maximum ratings (t a =25c unless otherwise specified) part number parameter symbol n-channel p-channel unit drain-source voltage v ds 20 -20 v typical gate-source voltage v gs 12 v continuous drain current 1 i d 0.75 -0.66 a pulsed drain current@ tp=10s i dm 1.8 -1.2 a thermal resistance from junction to ambient 1 r ja 833 c/ w lead temperature for soldering purposes @1/8 from case for 10s t l 260 c junction and storage temperature range t j , t stg 150, -55~150 c sot-563 49k e f j b c d g a h millimeter millimeter ref. min. max. ref. min. max. a 1.50 1.70 f 0.09 0.16 b 1.50 1.70 g 0.45 0.55 c 0.525 0.60 h 0.17 0.27 d 1.10 1.30 j 0.10 0.30 e - 0.05
elektronische bauelemente SSI3439J -ch: 0.75a, 20v, r ds(o) 380 m* p-ch: -0.66a, -20v, r ds(o) 520 m* & p-ch enhancement mode power mosfet 06-apr-2017 rev. a page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t a =25c unless otherwise specified) parameter symbol min. typ. max. unit test condition static characteristics n-ch 20 - - v gs =0, i d =250a drain-source breakdown voltage p-ch v (br)dss -20 - - v v gs =0, i d = -250a n-ch - - 1 v ds =20v, v gs =0 zero gate voltage drain current p-ch i dss - - -1 ua v ds = -20v, v gs =0 n-ch - - 20 gate-source leakage current p-ch i gss - - 20 a v ds =0v, v gs =10v n-ch 0.35 - 1.1 v ds =v gs, i d =250a gate-threshold voltage 2 p-ch v gs(th) -0.35 - -1.1 v v ds =v gs, i d = -250a n-ch - - 380 v gs =4.5v, i d =0.65a p-ch - - 520 v gs = -4.5v, i d = -1a n-ch - - 450 v gs =2.5v, i d =0.55a p-ch - - 700 v gs = -2.5v, i d = -0.8a n-ch - - 800 v gs =1.8v, i d =0.45a drain-source on resistance 2 p-ch r ds(on) - 950 - mk v gs = -1.8v, i d = -0.5a n-ch - 1.6 - v ds =10v, i d =0.8a forward transfer conductance 2 p-ch g fs - 1.2 - s v ds = -10v, i d = -0.54a n-ch - - 1.2 i s =0.15a, v gs =0 diode forward voltage p-ch v sd - - -1.2 v i s = -0.5a, v gs =0 dynamic characteristics n-ch - 79 - input capacitance p-ch c iss - 113 - n-ch - 13 - output capacitance p-ch c oss - 15 - n-ch - 9 - reverse transfer capacitance p-ch c rss - 9 - pf n-ch: v ds =16v, v gs =0, f=1mhz p-ch: v ds = -16v, v gs =0, f=1mhz switching characteristics 3 n-ch - 6.7 - turn-on delay time p-ch t d(on) - 9 - n-ch - 4.8 - rise time p-ch t r - 5.8 - n-ch - 17.3 - turn-off delay time p-ch t d(off) - 32.7 - n-ch - 7.4 - fall time p-ch t f - 20.3 - ns n-ch: v ds =10v, v gs =4.5v i d =0.5a, r gen =10k p-ch: v ds = -10v, v gs = -4.5v i d = -0.2a, r gen =10k notes: 1. the surface of the device is mounted on a fr4 bo ard using recommended minimum pad size. 2. pulse test: pulse width=300s, duty cycle Q 2%. 3. switching characteristics are independent from t he operating junction temperature.
elektronische bauelemente SSI3439J -ch: 0.75a, 20v, r ds(o) 380 m* p-ch: -0.66a, -20v, r ds(o) 520 m* & p-ch enhancement mode power mosfet 06-apr-2017 rev. a page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves (n-channel)
elektronische bauelemente SSI3439J -ch: 0.75a, 20v, r ds(o) 380 m* p-ch: -0.66a, -20v, r ds(o) 520 m* & p-ch enhancement mode power mosfet 06-apr-2017 rev. a page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves (p-channel)
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